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FDP047N08-F102
FDP047N08-F102Reference image

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Mfr. #:
FDP047N08-F102
Mfr.:
Batch:
new
Description:
Through hole N channel 75 V 164A (Tc) 268W (Tc) TO-220-3
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 75 V
Current at 25°C - Continuous Drain (Id) 164A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 4.7 ohms @ 80A, 10V
Vgs(th) (max) at Id 4.5V @ 250μA
Gate Charge (Qg) (max) at Vgs 152 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 9415 pF @ 25 V
FET Function -
Power Dissipation (Max) 268W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package/Case TO-220-3
Other product information

Advantage price,FDP047N08-F102 in stock can be shipped on the same day

In Stock: 2396
Qty.Unit PriceExt. Price
1+ $4.1339 $4.1339
10+ $3.4332 $34.332
100+ $2.7328 $273.28
800+ $2.3124 $1849.92
1600+ $1.9620 $3139.2
2400+ $1.8639 $4473.36
5600+ $1.7939 $10045.84
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
2396
Minimum:
1
MPQ:
1
Multiples:
1
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